报告分享 | 英飞凌科技Mark Nils Muenzer分享半导体对车用牵引逆变器性能与效率的赋能报告

Mark Nils Muenzer

Infineon Technologies AG

发表现场演讲

Selecting power semiconductor devices which meet performance, efficiency and cost targets is a challenge during every development of an automotive traction inverter. Today various materials Si, SiC & GaN and device structures IGBT, MOSFET and HEMT are investigated. While silicon IGBTs offer cost effective peak power, introduction of SiC MOSFETs boosted the efficiency of automotive traction inverters to more than 98% with the support of latest trench cell design. By combining both technologies in a Fusion switch an additional trade off point is available in the market. Finally, advancements in the development of GaN HEMTs are promising competitive devices for future generations of traction inverters. Setting the basis, all these solutions are evaluated as they support various voltage classes and vehicle configurations. To harvest the full performance of any of these power semiconductor devices, gate controls can be adapted. Increased switching speed reduces losses but Electromagnetic Compatibility (EMC) has to be managed. Furthermore, switching speed will influence effective dead times. The paper explores the possibilities for slew rate control with optimized dead times under consideration of Electromagnetic Interference (EMI) aspects. To demonstrate these effects the paper is supported by experimental results of a 1200V power module with latest asymmetric trench SiC MOSFETs from a 3rd generation. How improved gate control influences the power semiconductor selection will be discussed by comparing CLTP range for 400V and 800V powertrain designs with Si IGBT, SiC MOSFET, Fusion switch and GaN HEMT.

在车载牵引逆变器的每一轮开发过程中，挑选同时满足性能、效率与成本目标的功率半导体器件都是一项挑战。目前，硅（Si）、碳化硅（SiC）、氮化镓（GaN）等多种材料，以及 IGBT、MOSFET、HEMT 等器件结构均得到研究。硅基 IGBT 具备峰值功率成本优势；而借助最新的沟槽单元设计，碳化硅 MOSFET 的问世将车载牵引逆变器的效率提升至 98% 以上。通过将两种技术融合构成Fusion 开关，市场上获得了新的权衡方案。与此同时，氮化镓 HEMT 器件研发取得进展，有望成为下一代牵引逆变器的备选器件。上述各类方案可适配不同电压等级与整车架构，因此都纳入评估范围。

想要充分发挥任意一款功率半导体器件的性能，就需要对栅极控制进行适配优化。提升开关速度能够降低损耗，但必须管控电磁兼容（EMC）问题。此外，开关速度还会影响有效死区时间。本文探讨在兼顾电磁干扰（EMI）的前提下，实现斜率控制并优化死区时间的可行方案。为验证上述特性，本文配套了一款 1200V 功率模块的实验结果，该模块采用第三代最新非对称沟槽型碳化硅 MOSFET。文章将对比 400V 与 800V 动力系统架构下，硅 IGBT、碳化硅 MOSFET、Fusion 开关以及氮化镓 HEMT 的 CLTP 区间，探讨栅极控制优化如何影响功率半导体器件选型。

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