PCIM研讨会 | 墙报交流：聚焦Si/SiC/GaN功率器件创新，覆盖车规、风电、轨交、储能全场景技术突破

Power Devices

功率器件

8月26日 ，13:30-15:00

联合主持人：

• 詹益仁｜乾坤科技

• 罗海辉｜株洲中车时代半导体

参与单位：

• 森未科技

• 株洲中车时代半导体

• 日立能源

• 三菱电机

• 英飞凌

• SURAGUS GmbH

• 安森美    

• 赛晶半导体   

• 海军工程大学

• 博世

• 安世半导体    

• 中国科学院电工研究所

詹益仁 | 乾坤科技

本场Poster Session聚焦高功率半导体与电力电子最新技术，涵盖Si、SiC、GaN、IGBT、IGCT等元件及封装、散热、驱动与系统应用。重点议题包括新一代HVDC超高电压功率元件、高功率密度SiC/GaN模块，以及新能源车、储能、光伏、风电与轨道交通等应用。20组研究成果一次呈现，带来最新技术趋势与实务设计洞察，特别适合电力电子、功率半导体、能源系统及电动车领域的研发人员与产业专业人士交流。

HPD功率模块仿真研究

演讲简介：

HPD功率半导体模块广泛应用于新能源汽车，是整个汽车电力转换的中枢，对汽车行驶、充电等稳定运行起到了核心作用。

本文首先介绍了HPD的研发背景，使用情况及行业前景。

随后对常规HPD 模块进行三维建模，并根据模型进行了杂散电感仿真。杂散电感仿真结果显示，HPD模块整体杂散电感较低。

随后对HPD模块进行了传热仿真，拆用常规圆柱体pin-fin，pin-fin数量为530；使用液体水为冷却介质，仿真研究了不同流速下芯片的温度分布情况；

基于上一步，将pin-fin改为椭圆柱体，其余条件不变的情况下，可得到芯片温度分布情况，相较于圆柱体pin-fin，使用椭圆柱pin-fin散热器时芯片整体温度更低。

最后，将pin-fin形状改为正方体进行仿真计算，结果显示此时芯片温度分布介于圆柱体和椭圆柱体之间。

三芯片并联IGBT模块开关过程中的均流特性与优化研究

演讲简介：

本文研究了三芯片并联 IGBT 模块在开关过程中的均流问题。通过仿真研究了芯片电气参数和模块寄生电感对开关过程中电流分配的影响，并分析了因电流分配不均所导致的功率损耗和温升差异。此外，文中还提出了通过模块封装设计和芯片参数选择来优化均流效果的方法。

900V电压平台高结温高可靠性MOSFET产品

演讲简介：

本文对所提出的900V平面栅碳化硅MOSFET进行阐述，并拓展至传统模块中开关电能优化，涵盖了从器件技术、器件设计到电气特性和可靠性实验及电气特性方面的内容。通过优化外延缓冲层物料设计和沟道设计，使MOSFET实现了低导通电阻、高击穿电压、提高使用结温范围，进而具有更强的可靠性和功率密度，完美满足汽车应用的关键需求。

High power density 1700V/1000A RC IGBT module for Wind energy application

演讲简介：

A newly developed 1700V/1000A RC-IGBT module for wind energy application is introduced,which utilizes our latest 8th-generation RC-IGBT technology. It achieves a well-balanced trade-off between conduction loss and switching loss compared to our 7th-generation conventional IGBT and FRD. Through optimized cell design and the introduction of advanced lifetime control technique, we have achieved low power losses and robust safe operating area (SOA) performance. Compared with conventional IGBT module, the RC-IGBT module delivers an 18% higher output current capability and a 40% reduction in junction temperature fluctuation. Combined with our newly developed compact package, it enables greater output current capability in wind energy applications.

New-Generation 1400V U4 IGBT Module for Higher Power Density PV Inverter Applications

演讲简介：

AbstractThis paper presents CRRC's next-generation 1400V U4 module developed for photovoltaic (PV) inverter applications. To achieve significantly higher power density within the same package footprint, the module employs an NPC topology combined with a differentiated chip design strategy: the outer devices utilize high-frequency Si-IGBTs paired with SiC-SBDs for commutation, while the inner devices use low-frequency Si-IGBTs paired with Si-diodes. This hybrid approach enables a comprehensive optimization of power losses and system cost. Furthermore, the module provides excellent turn-off overvoltage control and ruggedness to cope with the complex operating conditions encountered in PV applications.

用于轨道交通牵引的新一代低电感 6500V/600A 全碳化硅功率模块

演讲简介：

本文介绍了一款面向轨道交通牵引应用的新一代低电感 6500V/600A 全碳化硅（SiC）功率模块。对该 SiC 模块的静态与动态特性进行了测试评估，并对比分析了其与同封装形式硅基 IGBT 功率模块的性能差异。

A New 6 Inch IGCT Platform for up to 8.5 kV with Outstanding Current Capability

演讲简介：

High power semiconductor applications are more and more evolving into higher power ratings. At the same time there is increasing pressure on cost. High voltage and large size 6 Inch IGCT enable to design these applications significantly more cost efficient at highest power level. The new 6Inch platform applies latest technologies what results in outstanding current capability at high voltage ratings up to 8.5 kV.

High Robustness Operation of 4.5 kV / 1500 A IGBT Modules in a 2-Parallel Configuration for HVDC Submodules

演讲简介：

This paper reports the results of driving two 4.5-kV/1500-A IGBT modules in parallel to evaluate their applicability and reliability for HVDC systems. The evaluation items included current sharing characteristics during normal operation, limit assessment of the RBSOA, and verification of withstand capability by short circuit tests (Type 2 and Type 4). The tests confirmed an operating region satisfying the specified safety margin in the RBSOA evaluation. Furthermore, the short circuit Type 2 and Type 4 tests verified the required withstanding capability, suggesting that 2 parallel operation of the evaluated IGBT modules is a reliable option for HVDC applications.

8th Generation LV100 IGBT Module for High Power Central-type PCS

演讲简介：

Mitsubishi Electric 8th generation LV100-type IGBT module CM1800DW-24ME was introduced. The newly adopted SDA and CPL chip technology was deployed. To check the dynamic characteristics, the switching test and short circuit test were done. The paper takes 1.25MW central-type PCS as an example, IGBT layout and power stack design were proposed. Meanwhile, the power loss and thermal rise were simulated to verify the feasibility.

High-Temperature Design Considerations for Silicon Based Automotive Inverters with 750V EDT HiT

演讲简介：

The paper describes the high-temperature design considerations for silicon based automotive inverters with 750V EDT HiT.  Using simulations, the benefits of the increased Tvj-max and lower losses of the technology are shown through the improvement in output current as well as chip shrink potential.

超越四探针法：面向功率模块材料的非接触式电学监测

演讲简介：

本文介绍了一种用于功率模块和功率混合集成器件的非接触式涡流方阻与电阻率表征解决方案。通过在线与离线高分辨率测量，可实现对导电层、衬底及互连材料的快速、无损评估。该方法支持实时质量控制、材料优化以及先进功率模块制造（包括基于 SiC 和 GaN 系统）的可靠性提升。

Design Considerations of Active Neutral Point Clamped Inverter for Energy Storage System

演讲简介：

The rapid increase in electricity demand driven by various external factors has intensified the need for Energy Storage Systems (ESS) capable of providing stable and reliable power. In response, grid forming ESS architectures are gaining importance, resulting in higher power requirements within Power Conversion Systems (PCS). Among the various Neutral Point Clamped (NPC) topologies used in ESS PCS, the Active Neutral Point Clamped (ANPC) inverter offers improved efficiency and reduced thermal stress compared to conventional NPC circuits. To minimize system losses, a combination of IGBTs, Si diodes, and SiC MOSFETs is commonly employed. However, the use of SiC MOSFETs introduces crosstalk challenges that must be addressed for stable operation. This paper presents an effective mitigation strategy for SiC MOSFET induced crosstalk within ANPC inverter. Additionally, It highlights the performance advantages achieved by replacing IGBT and Si diode with RC IGBT. technology are shown through the improvement in output current as well as chip shrink potential.

Performance Benchmarking of Si IGBT and SiC MOSFET in a 1200 V / 600 A Automotive EVD Power Module

演讲简介：

This paper compares a 1200 V, 600 A EVD-Type direct-cooled power module for EV traction applications, populated with Si (IGBT and diode) and SiC MOSFET chipsets. A novel bond layout improves current sharing and reduces parasitic inductance. A cost-per-ampere metric quantifies the economic trade-off between Si and SiC, revealing a crossover frequency above which SiC delivers lower cost despite higher die price. A drive-cycle study on a 250-kW commercial vehicle further shows ~2.5× higher losses for the IGBT, enabling SiC to offset its premium through energy savings and battery downsizing.

一种适用于多型负载的全固态高压高频可调脉冲速度脉冲电源

演讲简介：

本文提出了一种面向多类型负载的高压、高频且 dv/dt 可变的脉冲电源。首先，提出一种适用于多种负载的改进型 Marx 拓扑结构；其次，提出一种用于控制脉冲上升沿速度的新型栅极驱动电路及其控制方法；最后，完成该脉冲电源的研制与实验测试。实验结果表明，该脉冲电源可适配多种类型负载，输出脉冲电压范围为 0~±2500 V，工作频率范围为 0~30 kHz，脉冲沿速度可在 10~25 kV/μs 范围内灵活调节。

栅极应力对碳化硅器件静态参数以及开关损耗的影响

演讲简介：

This paper presents a systematic investigation of gate stress effects for the application with SiC MOSFETs. Six different vendors are tested under DC and AC gate stress, static and dynamic characterization is performed to evaluate the drift in key electrical parameters as well as dynamic behavior. Results show that, the drift is strongly technology dependent. Devices exhibiting larger drift in threshold voltage tend to show relative higher on resistance drift, other parameters as switching losses, however, may behave differently as they approach end of life. To ensure robust system design, the performance of the selected device must be carefully evaluated.

优化门极驱动电流整形以提升碳化硅MOSFET的开关性能

演讲简介：

碳化硅MOSFET凭借快速开关跃迁具备降低开关能量的潜力，但在实际应用中，电路固有的寄生参数会限制这一收益，甚至可能导致超出安全工作区（SOA）。为此，本文提出采用创新的可变电流源门极驱动器（CSGD），可动态调节门极驱动强度，即门极电流整形（GS）。通过应用多种GS策略，可在确保器件运行保持在SOA范围内的同时进一步降低开关能量。借助自动化测试平台，我们评估了该门极驱动在碳化硅MOSFET上实现最优GS的灵活性.

Impact of Vₜₕ Mismatch, Layout Symmetry, and Gate Resistance on Current Sharing in Parallel SiC MOSFETs

演讲简介：

This paper investigates current sharing in parallel SiC MOSFET half bridges considering threshold voltage (VGS,th), layout symmetry, and external gate resistance. A half-bridge with two parallel devices per switch is evaluated using VGS,th-matched and unmatched pairs of 1200 V, 30 mΩ SiC MOSFETs. Results show that VGS,th mismatch causes current imbalance, while layout and gate resistance mainly affect switching transients.

演讲简介：

Benefit of using GaN devices in low voltage platform at 48V inverter with a bench analysis results sharing remarking thermal and switching behavior of such solution.

Research on Packaging Structure of T-Type Three-Level GaN/SiC Hybrid Power Module

演讲简介：

This paper proposes a packaging structure for a GaN/SiC hybrid power module tailored for T-type three-level topologies. The structure employs a laminated direct bonded copper substrate design to minimize parasitic inductance and achieve current sharing in the power module layout. Through simulation and packaging validation of the module structure, this design offers a feasible packaging solution for the application of high-power-density, high-reliability GaN/SiC hybrid devices.

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