PCIM 研讨会 | 口述演讲：迭代先进功率器件，深挖硅基& GaN 芯片底层技术

“器件是电力电子的基石，优化芯片架构、迭代制程工艺、夯实可靠性，是提升变流器能效的本源路径。”

主持人

Norbert 

Pluschke

翼同半导体，中国香港

主持人

汤艺

斯达半导体，中国

主持人导读

Next-Generation 2300 V IGBT Chipset for Renewable Energy Applications

演讲简介：

We present a next-generation 2300 V i26 silicon IGBT chipset featuring a deep-submicron trench cell demonstrating best-in-class performance with safe operating area verified at 1800 V and twice the rated current, enabling a 1600 A phaseleg module.

The i26 IGBT implements an active cell structure where device behavior is determined mainly by trench and contact arrangement. This approach decouples carrier confinement from implant profile, enabling superior turn-off controllability without penalty on the loss trade-off curve.

演讲人简介：

Dr. Lars Knoll received his doctorate in physics from RWTH Aachen University in 2014. During his PhD, he focused on the fabrication, characterization, and simulation of energy-efficient electronic switches. In 2014, he moved to the ABB Corporate Research Center in Baden-Dättwil, Switzerland. He focused on wide bandgap power semiconductor switches and diodes and led a team of scientists investigating new concepts for wide bandgap power semiconductor devices in voltage classes from 1.2 kV to 10 kV, eventually leading SiC chip R&D at Hitachi Energy Semiconductors. He was responsible for the strategic SiC R&D roadmap, technology, and product development. In 2023 he took over the chip product development at SwissSEM Technologies AG, covering MOSFETs, IGBTs, and FRDs and became CTO and co-CEO of SwissSEM in 2025. He is the author and contributor of over 100 publications, patents and patent applications on semiconductor fabrication and designs and is a regular speaker at relevant international conferences in the field of power electronics.

基于马达驱动应用需求的新型功率MOSFET技术

演讲简介：

基于硬开关工作的电机驱动电路中的功率半导体器件容易发生电压超调和震荡，因此往往需要添加外部元件来抑制功率半导体器件的瞬态电压和电流的变化。 本研究介绍了一种新的驱动优化的100 V MOSFET技术，采用集成的非线性抑制电路来限制电压峰值和抑制震荡，而无需额外的外部电路。本文章描述了该新型功率MOSFET器件的设计概念，讨论了其对重要应用，例如马达驱动，需要权衡的因素的影响，并展示了在实际应用中该器件的性能和EMI测试结果。

演讲人简介：

宋清亮毕业于哈尔滨工业大学电气工程系，硕士学历。先后任职于艾默生网络能源有限公司（现维谛技术）和华为技术有限公司，负责通信AC/DC，DC/DC电源的研发设计。2013年加入英飞凌科技有限公司，作为FAE负责中国地区电源相关应用的技术支持。现为中国大陆和香港地区电源相关应用的技术团队负责人。

基于 200 毫米硅基氮化镓平台的低压 p 型 GaN 栅极 HEMT 器件 —— 面向先进 AI 供电应用、行业领先的低比导通电阻和优值

演讲简介：

本文报道了基于 200mm 硅基氮化镓平台的低压增强型 p-GaN 栅极 HEMT，通过横向尺寸微缩与欧姆接触优化实现了创纪录性能。采用全凹槽低温退火欧姆工艺，在 600nm 接触长度下获得 0.26Ω・mm 的低接触电阻。栅长 / 栅漏间距为 350/300nm 的器件阈值电压 VTH>1V，在 VGS=5V 时实现 1.68mΩ・mm² 的创纪录低比导通电阻 RON,SP。在漏源击穿电压 BVDS 约 25V 时，实现优异的开关品质因数 RON×QG=4.98mΩ・nC。将栅漏间距扩展至 700nm，BVDS 提升至约 60V，同时 RON,SP=2.36mΩ・mm²、品质因数 FOM=5.74mΩ・nC。在 6V 转 1.8V 降压变换器中，器件在 1.1MHz 时峰值效率达 93.5%，2.2MHz 时达 90.5%，为高性能计算供电网络中的高效硅基 GaN 功率级提供了可行技术路线。

演讲人简介：

报告人博士毕业于中国科学院大学，现任深圳平湖实验室器件工程师，主要从事低压 GaN 功率器件研发工作。拥有 6 年以上 GaN 材料与器件领域学术研究及技术开发经验，累计发表学术论文 5 篇以上，获授权发明专利 2 项。

Temperature Dependent Characterization of the Dynamic RDS,on of Medium Voltage GaN Power HEMTs

演讲简介：

The dynamic on-state resistance behavior is one of the most important parameters for the assessment of GaN power devices. In this work, the dynamic RDS,on of medium-voltage (MV) GaN HEMTs (120 V) is investigated depending on drain bias VDS, temperature T and biasing off-state time toff. Thereby, first pulse-IV measurements at negative temperatures down to -40°C are reported. An optimized clamping circuit, a novel SMD shunt and a new current regulator are implemented to enable precise measurement of forward resistance in the range of a few mΩ. A preconditioning sweep of the drain bias VDS,q is implemented with in-situ static RDS,on determination. The peak in RDS,on varies depending on the temperature. From -40°C to 20°C, a linear increase with preconditioning voltage VDS is observed. Above 60°C, the maximum of RDS,on is at preconditioning by low drain bias, similar as found before for 650 V GaN devices. Overall, absolute shifts are approx. 20% of the nominal values and within the datasheet values.

演讲人简介：

Maximilian Goller recieved his B.Sc. and M.Sc. in renewable energy systems at Chemnitz University of Technoloy. Since 2029, he is part of the scientific staff at the chair of power electronics at Chemnitz University of technology. His research interests focus on the characterization, ruggedness and reliability of GaN devices.

浙江大学、英飞凌科技、

香港微电子研究院、比亚迪

最佳论文奖 | 青年工程师奖

高校科学家奖 | 优秀墙报奖

一位长期活跃在全球电力电子行业

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