深圳平湖实验室

检测结果

本次测试样品为氧化镓8英寸衬底，取点共计5个，XRD摇摆曲线半高宽测试结果：22~26 arcsec。

8英寸衬底XRD摇摆曲线半高宽第三方测试结果-（深圳平湖实验室）

马尔文帕纳科亚太卓越应用中心

检测结果

本次测试样品为氧化镓8英寸衬底，取点共计5个，XRD摇摆曲线半高宽测试结果分别为：16.7 arcsec、16.2 arcsec、15.4 arcsec、15.3 arcsec、12.4 arcsec。

8英寸衬底XRD摇摆曲线半高宽第三方测试结果-（马尔文帕纳科亚太卓越应用中心）

2025年3月，镓仁半导体发布全球首颗第四代半导体氧化镓8英寸单晶，并加工出8英寸衬底，刷新了氧化镓单晶尺寸的全球纪录。中国氧化镓率先进入8英寸时代，具有深远的产业意义：

首先，8英寸氧化镓能够与现有硅基芯片厂的8英寸产线兼容，这将会显著加快其产业化应用的步伐。

其次，氧化镓衬底尺寸增大可提升其利用率，单片晶圆可制造芯片数量呈几何级增长，降低生产成本、提升生产效率。

最后，中国率先突破8英寸技术壁垒，不仅标志着我国在超宽禁带半导体领域的技术进步，更为我国氧化镓产业在全球半导体竞争中抢占了先机，有力推动我国在全球半导体竞争格局中占据优势地位。

目前在售的氧化镓衬底晶圆主要以2英寸和4英寸为主，难以与主流的Fab场产线设备兼容，这提高了下游器件厂商研发的难度与成本，导致氧化镓应用推进缓慢。

本次质量检测结果充分证明，镓仁半导体8英寸晶圆衬底质量优异，能够满足硅基8英寸产线生产要求，这将大幅降低下游应用端研发的难度与成本，促进产业化应用的快速落地。

镓仁半导体氧化镓衬底已逐步实现产业化，为下游客户提供大尺寸高质量的氧化镓单晶衬底产品。目前，镓仁半导体8英寸衬底已实现产品销售出货。

镓仁半导体不仅提供氧化镓单晶衬底产品，还全面开放氧化镓专用VB法晶体生长设备及配套工艺包的销售。

2024年9月，镓仁半导体推出了首台自研氧化镓专用晶体生长设备，不仅能够满足氧化镓生长对高温和高氧环境的需求，而且能够进行全自动化晶体生长，减少了人工干预，显著提高了生产效率和晶体质量。

该设备通过工艺控制可获得多种不同晶面的大尺寸单晶，且支持向更大尺寸单晶的升级，满足高校、科研院所、企业客户对氧化镓晶体生长的科研、生产等各项需求。该型氧化镓VB法长晶设备及其工艺包已全面开放销售。

TEST RESULTS

-Shenzhen Pinghu Laboratroy

The sample tested was an 8-inch β-Ga₂O₃ substrate, with a total of 5 measurement points taken. The test results showed the XRD rocking curve FWHM ranged from 22 to 26 arcsec.

Third-party test results of 8-inch substrate XRD rocking curve FWHM

（Shenzhen Pinghu Laboratroy）

TEST RESULTS

- Malvern Panalytical 

The sample tested was an 8-inch β-Ga₂O₃ substrate, with a total of 5 measurement points taken. The XRD rocking curve FWHM were：16.7 arcsec、16.2 arcsec、15.4 arcsec、15.3 arcsec、12.4 arcsec, respectively.

Third-party test results of 8-inch substrate XRD rocking curve FWHM

（Malvern Panalytical）

In March, 2025, GARENSEMI unveiled the world’s first fourth-generation semiconductor 8-inch β-Ga₂O₃ single crystal and processed it into 8-inch substrates, setting a new global record for the size of β-Ga₂O₃ single crystals. China’s β-Ga₂O₃ industry taking the lead in entering the 8-inch era has profound industrial significance:

First, the 8-inch β-Ga₂O₃ substrate is fully compatible with the existing 8-inch silicon production lines, significantly accelerating the progress of its industrialization.

Second, β-Ga₂O₃ substrate with larger diameter can remarkably improve its utilization with lower production costs and higher efficiency.

Currently, the commercially available β-Ga₂O₃ substrate wafers are primarily 2-inch and 4-inch, which are difficult to compatible with mainstream Fab production line equipment. This incompatibility increases the R&D difficulty and cost for downstream device manufacturers, hindering the adoption of β-Ga₂O₃.

These quality test results fully demonstrate that GARENSEMI's 8-inch wafers substrates exhibit excellent quality and can meet the production requirements of silicon-based 8-inch production lines. This breakthrough will significantly reduce the R&D difficulty and cost for downstream applications, thereby accelerating the industrialization process.

GARENSEMI has gradually achieved the industrialization of gallium oxide substrates, providing downstream customers with large-size, high-quality gallium oxide single crystal substrate products. GARENSEMI has now commenced commercial sales and shipments of its 8-inch substrates.

Garen not only provides β-Ga₂O₃ single crystal substrates, but also fully opens the sale of vertical Bridgeman crystal growth equipment and customized process packages for β-Ga₂O₃.

In September 2024, Garen launched its first self-developed vertical Bridgeman growth system for β-Ga₂O₃. This system is designed to maintain the high-temperature and high-oxygen environments required for β-Ga₂O₃ growth, with the capability of fully automated crystal growth. While manual intervention is minimized, the production efficiency and crystal quality are quite remarkable.

The equipment can obtain a variety of large-size single crystals with different crystal planes through process control, and support the upgrading to larger-size single crystals to meet the needs of universities, research institutes, and corporate customers for scientific research and production of β-Ga₂O₃ crystal growth. This VB method β-Ga₂O₃ crystal growth equipment and its process package have been fully opened for sale.